bipolar transistor
英 [ˌbaɪˈpəʊlə(r) trænˈzɪstə(r)]
美 [ˌbaɪˈpoʊlər trænˈzɪstər]
双极（性）晶体管，场效应晶体管
双语例句
- A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development
用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发 - Terminology and letter symbols for insulated-gate bipolar transistor
GB/T17008-1997绝缘栅双极型晶体管的词汇及文字符号 - A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。 - The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。 - In a bipolar transistor, the control area or the electrical connection to the control area.
在双极晶体管中，指控制区域或和控制区相连的导电连接。 - This thesis studies on enhancing the efficiency of simulation in bipolar transistor.
本论文主要研究如何增进双载子电晶体元件（BJT）的模拟效率。 - Effects of Stress on Bipolar Transistor Performance Parameters
应力对双极型晶体管参数性能的影响 - Switching time of bipolar transistor
双极晶体管开关时间 - A class E amplifier can be constructed using either bipolar transistor or MEMS switch.
分析一种基于E类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。 - A novel compound collector InGaP/ GaAs heterojunction bipolar transistor is designed based on electron velocity overshoot phenomena.
利用电子运动速度过冲现象，设计出了一种新结构复合收集区InGaP/GaAs异质结双极晶体管。 - In this paper we report the results obtained from numerical simulation of Si-SiGe-Si heterojunction bipolar transistor.
报道了Si-SiGe-Si异质结双极晶体管的数字模拟结果。 - The phase-noise of microwave bipolar transistor VCOs is discussed.
对微波晶体管振荡器的相位噪声进行了分析。 - A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。 - A physical model of partially depleted SOI MOSFET was proposed. The SOI MOSFET can be regarded as the combination of bulk silicon MOSFET and bipolar transistor. The model is obtained through detailed analysis of operation mechanism of SOI devices.
提出了部分耗尽SOIMOSFET物理模型，SOIMOSFET可以看作体硅MOSFET和双极晶体管的结合，模型通过详细地分析SOI器件在各工作区域的工作机理得出，并提取出了相应的模型参数。 - The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.
该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。 - This paper introduces an optimum design method for Darlington power transistor structure consisting of VDMOS and bipolar transistor and technological parameters. Also, the design model is established.
提出了VDMOS和双极晶体管复合而成的达林顿功率晶体管结构和工艺参数的优化设计方法，建立了设计模型。 - The study on the theory of the edge crowding effect of emitter current in a bipolar transistor is reviewed.
本文对双极晶体管发射极电流集边效应的理论研究作了回顾。 - The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。 - A novel InP HBT ( heterojunction bipolar transistor) is proposed and evaluated.
本文提出并成功地试制了一种InP异质结双极型晶体管。 - Insulated Gate Bipolar Transistor ( IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管（IGBT）作为一种可控开关，获得了广泛应用。 - A method on improved credibility of succession operation life test of power bipolar transistor is introduced in this paper.
提出了一种提高功率晶体管稳态工作寿命试验可信度的技术措施，利用这一技术措施，可以在试验过程中实时测量并严格控制晶体管的结温达到最高允许结温，从而提高了试验的可信度。 - VDMOS FET power transistor has the features of MOS FET and bipolar transistor.
VDMOS场效应功率晶体管具有双极型和一般MOS器件的优点。 - The problem of closed-loop stability of logarithmic converters employing a bipolar transistor as logarithmic feedback element is discussed.
文章对于双极晶体管作为放大器反馈元件构成的对数交换器的闭环稳定性问题进行了分析。 - Analysis and Optimization Design for Heterojunction Bipolar Transistor
异质结双极晶体管的计算机模拟分析和优化设计 - Heterojunction Bipolar Transistor ( HBT) is one of important heterojunction electronics devices.
异质结双极晶体管（heterojunctionbipolartransistor简称HBT）是异质结电子器件重要的一种。 - A self-aligned InP/ GaInAs single heterojunction bipolar transistor ( HBT) is investigated using a novel T-shaped emitter.
研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管。 - In this paper, nitride-based heterojunction bipolar transistor ( HBT) and related techniques are discussed.
本文主要关注氮化物基异质结双极晶体管（HBT）及其相关技术。 - Heterojunction bipolar transistor ( HBT) is one of the most important high speed devices in optical and wireless communication systems.
异质结双极晶体管（HBT）是光纤通信和无线通信系统中的关键器件之一，有着广阔的应用前景，对它的研究具有重要的学术意义和实际价值。 - The DHBT ( double heterojunction bipolar transistor) used for monolithic integrated photoreceiver is analysed.
对适用于单片集成的DHBT（双异质结双极晶体管）的能带结构与结电流进行分析和研究。